unisonic technologies co., ltd utt25p06 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2014 unisonic technologies co., ltd qw-r502-595.e ? 60v, ? 27.5 a p-channel power mosfet ? description the utc utt25p06 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed and a minimum on-state resistanc e, and it can also withstand high energy in the avalanche. this utc utt25p06 is suitable for power supplies, converters, pwm motor controls and bridge circuits, etc. ? features * v ds = -60v * i d = -27.5a * r ds(on) <0.075 ? @ v gs =-10v, i d =-12.5a; * r ds(on) <0.082 ? @ v gs =-10v, i d =-25a * high switching speed ? symbol to-220 1 1 to-220f to-252 to-251 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt25p06l-ta3-t utt25p06g-ta3-t to-220 g d s tube utt25p06l-tf3-t utt25p06g-tf3-t to-220f g d s tube utt25p06l-tm3-t utt25p06g-tm3-t to-251 g d s tube utt25p06l-tn3-r utt25p06g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
utt25p06 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-595.e ? marking
utt25p06 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-595.e ? absolute maximum ratings (t j =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss -60 v gate-source voltage continuous v gss 15 v non ? repetitive (t p 10ms) v gsm 20 v drain current continuous @ t a =25c i d -27.5 a pulsed (t p 10s) i dm -80 a power dissipation @t a =25c to-220/to-220f p d 2 w to-251/to-252 1.25 w junction temperature t j +175 c storage temperature t stg -55~+175 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. when surface mounted to an fr4 board using 1" pad size (cu area 1.127 in 2 ). 3. when surface mounted to an fr4 board using t he minimum recommended pad size (cu area 0.412 in 2 ). ? thermal characteristics parameter symbol ratings unit junction to ambient to-220/to-220f ja 62.5 c/w to-251/to-252 100 c/w junction to case to-220 jc 1.2 c/w to-220f 4.5 c/w to-251/to-252 2.5 c/w
utt25p06 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-595.e ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage (note 1) bv dss i d =-250a, v gs =0v -60 v positive temperature coefficient 64 mv/c drain-source leakage current i dss v gs =0v, v ds = ? 60v, t j =25c -10 a v gs =0v, v ds = ? 60v, t j =150c -100 gate- source leakage current forward i gss v gs =+15v, v ds =0v +100 na reverse v gs =-15v, v ds =0v -100 na on characteristics (note 1) gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1.2 -2.4 v negative threshold temperature coefficient 6.2 mv/c static drain-source on-state resistance r ds(on) v gs =-10v, i d =-12.5a 0.05 0.075 ? v gs =-10v, i d =-25a 0.055 0.082 dynamic parameters input capacitance c iss v gs =0v, v ds =-25v, f=1.0mhz 1650 2200 pf output capacitance c oss 140 250 pf reverse transfer capacitance c rss 125 180 pf switching parameters (note 1, 2) total gate charge q g v gs =-10v, v ds =-48v, i d =-25a 155 200 nc gate to source charge q gs 26 nc gate to drain charge q gd 18 nc turn-on delay time t d ( on ) v dd =-30v, i d =-1a, v gs =-10v, r g =9.1 ? 50 60 ns rise time t r 60 118 ns turn-off delay time t d ( off ) 320 480 ns fall-time t f 100 160 ns source- drain diode ratings and characteristics (note 1) drain-source diode forward voltage v sd i s =-25a, v gs =0v -1.8 -2.5 v i s =-25 a, v gs =0v, t j =150c -1.4 body diode reverse recovery time t rr i s =-25a, v gs =0v, dl s /dt=100a/s 70 ns body diode reverse recovery charge q rr 0.2 c notes: 1. indicates pulse test: pulse width 300s, duty cycle 2%. 2. switching characteristics are indepe ndent of operating junction temperatures.
utt25p06 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-595.e ? typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, -bv dss (v) 0.5 0 drain current vs. gate threshold voltage gate threshold voltage, -v th (v) 1.5 2.0 3.0 1.0 2.5 0 50 100 150 200 250 300 020 60 80100 40 0 50 100 150 200 250 300 drain current, -i d (a) drain current, -i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior wr itten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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